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esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 1/46 vss dq 15 dq 14 dq13 dq12 dq11 dq10 dq9 dq8 nc udqm clk a12 a11 a8 a7 vss a5 vddq dq0 vssq dq2 vddq dq4 vdd ldqm cas ras ba0 ba1 a0 a1 a3 a2 123456789 a b c d e f g h j vssq vddq vssq vddq vss cke a9 a6 a4 vdd dq 1 dq3 dq7 we cs a10 vdd vssq dq6 dq5 mobile sdram 4m x 16 bit x 4 banks mobile synchronous dram features ? 1.8v power supply ? lvcmos compatible with multiplexed address ? four banks operation ? mrs cycle with address key programs - cas latency (3) - burst length (1, 2, 4, 8 & full page) - burst type (sequential & interleave) ? emrs cycle with address ? all inputs are sampled at the positive going edge of the system clock ? special function support - pasr (partial array self refresh) - tcsr (temperature compensated self refresh) - ds (driver strength) ? dqm for masking ? auto & self refresh ? 64ms refresh period (8k cycle) ordering information product id max freq. package comments m52d2561616a-5big2f 200mhz 54 ball fbga pb-free m52d2561616a-6big2f 166mhz 54 ball fbga pb-free m52d2561616a-7big2f 143mhz 54 ball fbga pb-free general description the m52d2561616a is 268,435,456 bits sy nchronous high data rate dynamic ram organized as 4 x 4,194,304 words by 16 bits. synchronous design allows precise cy cle controls with the use of system clock i/o transactions are possible on every clock cycle. range of operating frequencie s, programmable burst lengt hs and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. ball configuration (top view) (bga54, 8mmx8mmx1mm body, 0.8mm ball pitch)
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 2/46 functional block diagram ball function description pin name input function clk system clock active on the positive going edge to sample all inputs cs chip select disables or enables device operation by masking or enabling all inputs except clk , cke and l(u)dqm cke clock enable masks system clock to freeze operation from the next clock cycle. cke should be enabled at least one cycle prior new command. disable input buffers for power down in standby. a0 ~ a12 address row / column address are multiplexed on the same pins. row address : ra0~ ra12, column address : ca0~ca8 ba0 , ba1 bank select address selects bank to be activated during row address latch time. selects bank for read / write during column address latch time. ras row address strobe latches row addresses on the posit ive going edge of the clk with ras low. enables row access & precharge. cas column address strobe latches column address on the positive going edge of the clk with cas low. enables column access. we write enable enables write operation and row precharge. latches data in starting from cas , we active. l(u)dqm data input / output mask makes data output hi-z, t shz after the clock and masks the output. blocks data input when l(u)dqm active. dq0 ~ dq15 data input / output data input s / outputs are multiplexed on the same pins. v dd / v ss power supply / ground power and ground for the input buffers and the core logic. v ddq / v ssq data output power / ground isolated power supply and ground fo r the output buffers to provide improved noise immunity. nc no connection this pin is recommended to be left no connection on the device. l(u)dqm dq mode register control logic column address buffer & refresh counter row address buffer & refresh counter bank d row decoder bank a bank b bank c sense amplifier column decoder data control circuit latch circuit input & output buffer address clock generator clk cke command decoder cs ras cas we
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 3/46 absolute maximum ratings parameter symbol value unit voltage on any pin relative to v ss v in , v out -1.0 ~ 2.6 v voltage on v dd supply relative to v ss v dd , v ddq -1.0 ~ 2.6 v operation ambient temperature t a -40 ~ +85 c ? storage temperature t stg -55 ~ +150 c ? power dissipation p d 1 w short circuit current i os 50 ma note: permanent device damage may occur if abso lute maximum rating are exceeded. functional operation should be restrict ed to recommended operating condition. exposure to higher than recommended voltage for exten ded periods of time could affect device reliability. dc operating condition recommended operating conditions (voltage referenced to v ss = 0v) parameter symbol min typ max unit note supply voltage v dd , v ddq 1.7 1.8 1.95 v 1 input logic high voltage v ih 0.8 x v ddq 1.8 v ddq +0.3 v 2 input logic low voltage v il -0.3 0 0.3 v 3 output logic high voltage v oh v ddq -0.2 - - v i oh = -0.1ma output logic low voltage v ol - - 0.2 v i ol = 0.1ma input leakage current i il -2 - 2 ? a 4 note: 1. under all conditions, v ddq must be less than or equal to v dd . 2. v ih (max) = 2.2v. the overshoot voltage duration is ? ? ? v in ? v ddq . input leakage currents include hi-z output leakage for all bi-directio nal buffers with tri-state outputs. capacitance (v dd = 1.8v, t a = 25 c , f = 1mhz) parameter symbol min max unit input capacitance (a0 ~ a12, ba0 ~ ba1) c in1 2 5 pf input capacitance (clk, cke, cs , ras , cas , we & l(u)dqm) c in2 2 7 pf data input/output capacitance (dq0 ~ dq15) c out 2 7 pf
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 4/46 dc characteristics recommended operating condition unless otherwise noted version parameter symbol test condition -5 -6 -7 unit note operating current (one bank active) i cc1 burst length = 1 t rc ? t rc (min), t cc ? t cc (min), i ol = 0ma 60 50 45 ma 1 i cc2p cke ? v il (max), t cc =15ns 600 ua precharge standby current in power-down mode i cc2ps cke ? v il (max), clk ? ? ? v ih (min), cs ? v ih (min), t cc =10ns input signals are changed one time during 20ns 10 ma precharge standby current in non power-down mode i cc2ns cke ? v ih (min), clk ? ? ? v il (max), t cc =15ns 4 active standby current in power-down mode i cc3ps cke ? v il (max), clk ? ? ? v ih (min), cs ? v ih (min), t cc =15ns input signals are changed one time during 2clks all other pins ? v dd -0.2v or 0.2v 12 ma active standby current in non power-down mode (one bank active) i cc3ns cke ? v ih (min), clk ? ? 95 85 65 ma 1 refresh current i cc5 t rfc ? t rfc (min) 85 75 70 ma 2 tcsr range 45 75 c full array 650 700 1/2 array 600 650 1/4 array 550 600 1/8 array 500 550 self refresh current i cc6 cke ? 0.2v 1/16 array 450 500 ua deep power down current i cc7 cke ? 0.2v 10 ua note: 1.measured with outputs open. addresse s are changed only one time during t cc (min). 2.refresh period is 64ms. addresses are changed only one time during t cc (min).
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 5/46 ac operating test conditions (v dd = 1.7v~1.95v) parameter value unit input levels (vih/vil) 0.9 x v ddq / 0.2 v input timing measurement reference level 0.5 x v ddq v input rise and fall time tr / tf = 1 / 1 ns output timing measurement reference level 0.5 x v ddq v output load condition see fig.2 operating ac parameter (ac operating conditions unless otherwise noted) version parameter symbol -5 -6 -7 unit note row active to row active delay t rrd (min) 10 12 14 ns 1 ras to cas delay t rcd (min) 15 18 21 ns 1 row precharge time t rp (min) 15 18 21 ns 1 t ras (min) 40 42 42 ns 1 row active time t ras (max) 100 us - @ operating t rc (min) 55 60 63 ns 1 row cycle time @ auto refresh t rfc (min) 72 ns 1 , 5 last data in to new col. address delay t cdl (min) 1 clk 2 last data in to row precharge t rdl (min) 2 clk 2 last data in to burst stop t bdl (min) 1 clk 2 col. address to col. address delay t ccd (min) 1 clk 3 mode register command to active or refresh command t mrd (min) 2 clk - refresh period(8,192 rows) t ref (max) 64 ms 6 number of valid output data 2 ea 4 note: 1. the minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and then rounding off to the next higher integer. 2. minimum delay is required to complete write. 3. all parts allow every cycle column address change. 4. in case of row precharge interr upt, auto precharge and read burst stop. the earliest a precharge command can be issued after a r ead command without the loss of data is cl+bl-2 clocks 5. a new command may be given t rfc after self refresh exit. 6. a maximum of eight consecutive auto refresh commands (with t rfcmin ) can be posted to any given sdram, and the maximum absolute interval between any auto refresh command and the next auto refresh command is 8x7.8 s.) z0=50 1.8v output (fig.2) ac output load circuit 20 pf vtt =0.5x vddq voh(dc) = vddq-0.2v, ioh = -0.1ma vol(dc) = 0.2v, iol = 0.1ma 20 pf output (fig.1) dc output load circuit 10.6k 13.9k 50
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 6/46 ac characteristics (ac operating conditions unless otherwise noted) -5 -6 -7 parameter symbol min max min max min max unit note clk cycle time t cc 5 1000 6 1000 7 1000 ns 1 clk to valid output delay t sac 4.5 5.4 6 ns 1 output data hold time t oh 2 2.6 2.6 ns 2 clk high pulse width t ch 2 2.5 2.5 ns 3 clk low pulse width t cl 2 2.5 2.5 ns 3 input setup time t ss 2 2 2 ns 3 input hold time t sh 1 1 1.5 ns 3 clk to output in low-z t slz 1 1 1 ns 2 clk to output in hi-z t shz 4.5 5.4 6 ns *all ac parameters are measured from half to half. note: 1. parameters depend on programmed cas latency. 2. if clock rising time is longer than 1ns, (t r/2-0.5)ns should be added to the parameter. 3. assumed input rise and fall time (tr & tf)=1ns. if tr & tf is longer than 1ns, transient time compensation sh ould be considered, i.e., [(tr+ tf)/2-1]ns should be added to the parameter.
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 7/46 simplified truth table command cken-1 cken cs ras cas we dqm ba0 ba1 a10/ap a12~a11, a9~a0 note mode register set register extended mode register set h x l l l l x op code 1,2 auto refresh h 3 entry h l l l l h x x 3 l h h h x 3 refresh self refresh exit l h h x x x x x 3 bank active & row addr. h x l l h h x v row address auto precharge disable l 4 read & column address auto precharge enable h x l h l h x v h column address (a0~a8) 4,5 auto precharge disable l 4 write & column address auto precharge enable h x l h l l x v h column address (a0~a8) 4,5 burst stop h x l h h l x x 6 bank selection v l precharge all banks h x l l h l x x h x h x x x entry h l l h h h x clock suspend or active power down mode exit l h x x x x x x h x x x entry h l l h h h x h x x x precharge power down mode exit l h l h h h x x dqm h x v x 7 h x x x no operating command h x l h h h x x entry h l l h h l x deep power down mode exit l h x x x x x x (v = valid, x = don?t care. h = logic high, l = logic low) note: 1.op code: operating code a0~a12 & ba0~ba1: program keys. (@ mrs). ba1=0 for mrs and ba1=1 for emrs 2.mrs/emrs can be issued only at all banks precharge state. a new command can be issued after 2 clk cycles of mrs/emrs. 3.auto refresh functions are as same as cbr refresh of dram. the automatical precharge wi thout row precharge of command is meant by ?auto?. auto/self refresh can be issued only at all banks idle state. 4.ba0~ba1: bank select addresses. if both ba0 and ba1 are ?low? at read, write, row active and precharge, bank a is selected. if both ba0 is ?low? and ba1 is ?high? at read, writ e, row active and precharge, bank b is selected. if both ba0 is ?high? and ba1 is ?low? at read, writ e, row active and precharge, bank c is selected. if both ba0 and ba1 are ?high? at read, write, row active and precharge, bank d is selected if a10/ap is ?high? at row precharge, ba0 and ba1 is ignored and all banks are selected. 5.during burst read or write with auto precha rge, new read/write command can not be issued. another bank read/write command ca n be issued after the end of burst. new row active of the associated bank can be issued at t rp after the end of burst. 6.burst stop command is valid at every burst length. 7.dqm sampled at positive goi ng edge of a clk and masks the data-in at the very clk (write dqm latency is 0), but makes hi-z state the data-out of 2 clk cy cles after.(read dqm latency is 2)
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 8/46 mode register field table to program modes register programmed with mrs address ba0 ba1 a12~a10/ap a9 a8~a7 a6 a5 a4 a3 a2 a1 a0 function 0 0 rfu w.b.l tm cas latency bt burst length test mode cas latency burst type burst length a8 a7 type a6 a5 a4 latency a3 type a2 a1 a0 bt = 0 bt = 1 0 0 mode register set 0 0 0 reserved 0 sequential 0 0 0 1 1 0 1 reserved 0 0 1 reserved 1 interleave 0 0 1 2 2 1 0 reserved 0 1 0 reserved 0 1 0 4 4 1 1 reserved 0 1 1 3 0 1 1 8 8 write burst length 1 0 0 reserved 1 0 0 reserved reserved a9 length 1 0 1 reserved 1 0 1 reserved reserved 0 burst 1 1 0 reserved 1 1 0 reserved reserved 1 single bit 1 1 1 reserved 1 1 1 full page reserved full page length: 512 note: 1. rfu (reserved for future use) should stay ?0? during mrs cycle. 2. if a9 is high during mrs cycle, ?burst read single bit write? function will be enabled. 3. the full column burst (512 bit) is avail able only at sequential mode of burst type.
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 9/46 extended mode register set (emrs) the extended mode register stores for se lecting pasr; ds. the extended mode regi ster set must be done before any active command after the power up sequence. the extended mo de register is written by asserting low on cs , ras , cas , we and high on ba1,low on ba0(the sdram should be in all bank prechar ge with cke already high prior to writing into the extended more register). the state of address pins a0~an in the same cycle as cs , ras , cas , we going low is written in the extended mode register. refer to the table for specific codes. the extended mode register can be changed by using the same command and clock cycle requirements during operations as long as all banks are in the idle state. internal temperature compensated self refresh (tcsr) note: 1. in order to save power consumption, mobile-dram includes t he internal temperature sensor and control units to control the self refresh cycle automatically a ccording to the device temperature. 2. if the emrs for external tcsr is issued by the controller, this emrs code for tcsr is ignored. ba1 ba0 a12 ~ a8 a7 a6 a5 a4 a3 a2 a1 a0 address bus 1 0* 0* ds tcsr pasr extended mode register set internal tcsr a7-a5 driver strength 000 full strength 001 1/2 strength 010 1/4 strength 011 1/8 strength ds 100 3/4 strength note: * ba0 and a12~ a8 should stay ?0? during emrs cycle ** msb: most significant bit a2-a0 self refresh coverage 000 full array 001 1/2 array (ba1=0) 010 1/4 array (ba0=ba1=0) 011 reserved 100 reserved 101 1/8 array (ba1=ba0= row addr msb** = 0) 110 1/16 array (ba1=ba0= row addr 2 msb = 0) pasr 111 reserved
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 10/46 burst sequence (burst length = 4) initial address a1 a0 sequential interleave 0 0 0 1 2 3 0 1 2 3 0 1 1 2 3 0 1 0 3 2 1 0 2 3 0 1 2 3 0 1 1 1 3 0 1 2 3 2 1 0 burst sequence (burst length = 8) initial address a2 a1 a0 sequential interleave 0 0 0 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 0 0 1 1 2 3 4 5 6 7 0 1 0 3 2 5 4 7 6 0 1 0 2 3 4 5 6 7 0 1 2 3 0 1 6 7 4 5 0 1 1 3 4 5 6 7 0 1 2 3 2 1 0 7 6 5 4 1 0 0 4 5 6 7 0 1 2 3 4 5 6 7 0 1 2 3 1 0 1 5 6 7 0 1 2 3 4 5 4 7 6 1 0 3 2 1 1 0 6 7 0 1 2 3 4 5 6 7 4 5 2 3 0 1 1 1 1 7 0 1 2 3 4 5 6 7 6 5 4 3 2 1 0
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 11/46 device operations clock (clk) the clock input is used as the reference for all sdram operations. all operations are synchronized to the positive going edge of the clock. the clock transitions must be monotonic between v il and v ih . during operation with cke high all inputs are assumed to be in valid state (low or high) for the duration of setup and hold time around positive edge of the clock for proper functi onality and icc specifications. clock enable(cke) the clock enable (cke) gates the clock onto sdram. if cke goes low synchronously with clock (set-up and hold time same as other inputs), the internal clock suspended from the next clock cycle and the state of out put and burst address is frozen as long as the cke remains low. all other inputs are ignored from the next clock cycle after cke goes low. when all banks are in the idle state and cke goes low synchronously with clock, the sdram enters the power down mode from the next clock cycle. the sdram remains in the power down mode ignoring the other inputs as long as cke remains low. the power down exit is synchronous as the internal clock is suspended. when cke goes high at least ?1clk + t ss ? before the high going edge of the clock, then the sdram becomes active from the same clock edge accepting all the input commands. bank addresses (ba0~ba1) this sdram is organized as four independent banks of 4,194,304 words x 16 bits memory arrays. the ba0~ba1 inputs are latched at the time of assertion of ras and cas to select the bank to be used for the operation. the banks addressed ba0~ba1 are latched at bank active, read, write, mode register set and precharge operations. address inputs (a0~a12) the 22 address bits are requ ired to decode the 4,194,304 word locations are multiplexed into13 address input pins (a0~a12). the 13 row addresses are latched along with ras and ba0~ba1 during bank active command. the 9 bit column addresses are latched along with cas , we and ba0~ba1 during read or with command. nop and device deselect when ras , cas and we are high, the sdram performs no operation (nop). nop does not initiate any new operation, but is needed to complete operations which require more than single clock cycle like bank activate, burst read, auto refresh, etc. the device deselect is also a nop and is entered by asserting cs high. cs high disables the command decoder so that ras , cas , we and all the address inputs are ignored. mode register set (mrs) the mode register stores the data for controlling the various operating modes of sdram. it programs the cas latency, burst type, bu rst length, test mode and various vendor specific options to make sdram useful for variety of different applications. the default value of the mode register is not defined, therefore the mode register must be written after power up to operate the sdram. the mode register is written by asserting low on cs , ras , cas and we (the sdram should be in active mode with cke already high prior to writing the mode register). the stat e of address pins a0~a12 and ba0~ba1 in the same cycle as cs , ras , cas and we going low is the data written in the mode register. two clock cycles is required to complete the write in the mode register. the mode register contents can be changed using the same command and clock cycle requirements during oper ation as long as all banks are in the idle state. the mode register is divided into various fields into depending on functionality. the burst length field uses a0~a2, burst type uses a3, cas latency (read latency from column address) use a4~a6, vendor specific options or test mode use a7~a8, a10~ a12 and ba1~ba0. the write burst length is programmed using a9. a7~a8, a10/ap~a12 and ba0~ba1 must be set to low for normal sdram operation. refer to the tabl e for specific codes for various burst length, burst type and cas latencies.
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 12/46 device operations (continued) bank activate the bank activate command is used to select a random row in an idle bank. by asserting low on ras and cs with desired row and bank address, a row access is initiated. the read or write operation can occur after a time delay of t rcd (min) from the time of bank activation. t rcd is the internal timing parameter of sdram, therefore it is dependent on operating clock frequency. the minimum number of clock cycles required between bank activate and read or write command should be calculated by dividing t rcd (min) with cycle time of the clock and then rounding of the result to the next higher integer. the sdram has four internal banks in the same chip and shares part of the internal circuitry to reduce chip area, therefore it re stricts the activation of four banks simultaneously. also the noise generated during sensing of each bank of sdram is high requiring some time for power supplies to recover before another bank can be sensed reliably. t rrd (min) specifies the minimum time required between activating different bank. the number of clock cycles required between different bank activation must be calculated similar to t rcd specification. the minimum time required for the bank to be active to initiate sensing and restoring the complete row of dynamic cells is determined by t ras (min). every sdram bank activate command must satisfy t ras (min) specification before a precharge command to that active bank can be asserted. the maximum time any bank can be in the active state is determined by t ras (max) and t ras (max) can be calculated similar to t rcd specification. burst read the burst read command is used to access burst of data on consecutive clock cycles from an active row in an active bank. the burst read command is issued by asserting low on cs and ras with we being high on the positive edge of the clock. the bank must be active for at least t rcd (min) before the burst read command is issued. the first output appears in cas latency number of clock cycles after the issue of burst read command. the burst length, burst sequence and latency from the burst read command is determined by the mode register which is already programmed. the burst read c an be initiated on any column address of the active row. the address wraps around if the initial address does not start from a boundary such that number of outputs from each i/o are equal to the burst length programmed in the mode register. the output goes into high-impedance at the end of burst, unless a new burst read was initiated to keep the data output gapless. the burst read can be terminated by issuing another burst read or burst write in the same bank or the other active bank or a precharge command to the same bank. the burst stop command is valid at every page burst length. burst write the burst write command is similar to burst read command and is used to write data into the sdram on consecutive clock cycles in adjacent addresses depending on burst length and burst sequence. by asserting low on cs , cas and we with valid column address, a write burst is initiated. the data inputs are provided for the initial address in the same clock cycle as the burst write command. the input buffer is deselected at the end of the burst length, even though the internal writing can be completed yet. the writing can be complete by issuing a burst read and dqm for blo cking data inputs or burst write in the same or another active bank. the burst stop command is valid at every burst length. the write burst can also be terminated by using dqm for blocking data and procreating the bank t rdl after the last data input to be written into the active row. see dqm operation also. dqm operation the dqm is used mask input and output operations. it works similar to oe during operation and inhibits writing during write operation. the read latency is two cycles from dqm and zero cycle for write, which means dqm masking occurs two cycles later in read cycle and occurs in the same cycle during write cycle. dqm operation is synchronous wi th the clock. the dqm signal is important during burst interrupts of write with read or precharge in the sdram. due to asynchronous nature of the internal write, the dqm operation is critical to avoid unwanted or incomplete writes when the complete burst write is required. please refer to dqm timing diagram also. precharge the precharge is performed on an active bank by asserting low on clock cycles required between bank activate and clock cycles required between bank activate and cs , ras , we and a10/ap with valid ba0~ba1 of the bank to be procharged. the precharge command can be asserted anytime after t ras (min) is satisfied from the bank acti ve command in the desired bank. t rp is defined as the minimum number of clock cycles required to complete row precharge is calculated by dividing t rp with clock cycle time and rounding up to the next higher integer. care should be taken to make sure that burst write is co mpleted or dqm is used to inhibit writing before precharge command is asserted. the maximum time any bank can be active is specified by t ras (max). therefore, each bank activates command. at the end of precharge, t he bank enters the idle state and is ready to be activated again. entry to power-down, auto refresh, self refresh and mode register set etc. is possible only when all banks are in idle state.
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 13/46 device operations (continued) auto precharge the precharge operation can also be performed by using auto precharge. the sdram internally generates the timing to satisfy t ras (min) and ?t rp ? for the programmed burst length and cas latency. the auto precharge command is issued at the same time as burst write by asserting high on a10/ap, the bank is precharge comm and is asserted. once auto precharge command is given, no new commands are possible to that particular bank until the bank achieves idle state. all banks precharge all banks can be precharged at the same time by using precharge all command. asserting low on cs , ras , and we with high on a10/ap after all banks have satisfied t ras (min) requirement, performs precharge on all banks. at the end of t rp after performing precharge all, all banks are in idle state. auto refresh the storage cells of sdram need to be refreshed every 64ms to maintain data. an auto refresh cycle accomplishes refresh of a single row of storage cells. the internal counter increments automatically on every auto refresh cycle to refresh all the rows. an auto refresh command is issued by asserting low on cs , ras and cas with high on cke and we . the auto refresh command can only be asserted with all banks being in idle st ate and the device is not in power down mode (cke is high in the previous cycle). the time required to complete the auto refresh operation is specified by t rfc (min). the minimum number of clock cycles required can be calculated by driving t rfc with clock cycle time and them rounding up to the next higher integer. the auto refresh command must be followed by nop?s until the auto refresh operation is comple ted. the auto refresh is the preferred refresh mode when the sdram is being used for normal data transactions. the auto refresh cycle can be performed once in 7.8 us. self refresh the self refresh is another refresh mode available in the sdram. the self refresh is the preferred refresh mode for data retention and low po wer operation of sdram. in self refresh mode, the sdram disables the internal clock and all the input buffers except cke. the refresh addressing and timing is internally generated to reduce power consumption. the self refresh mode is entered from all banks idle state by asserting low on cs , ras , cas and cke with high on we . once the self refresh mode is entered, only cke state being low matters, all the other inputs including clock are ignored to remain in the refresh. the self refresh is exited by restarting the external clock and then asserting high on cke. this must be followed by nop?s for a minimum time of t rfc before the sdram reaches idle state to begin normal operation. 8k cycles of burst auto refresh is requi red immediately before self refresh entry and immediately after self refresh exit.
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 14/46 commands mode register set command ( cs , ras , cas , we , ba1, ba0 = low) the dram has a mode register that defi nes how the device operates. in this command, a0 through ba0 are the data input pins. after power on, the mode register set command must be executed to initialize the device. the mode register can be set only when all banks are in idle state. during 2clk (t mrd ) following this command, the dram cann ot accept any other commands. extended mode register set command ( cs , ras , cas , we , ba0 = low ; ba1= high) the dram has an extended mode register that defines how to set pasr, ds. activate command ( cs , ras = low, cas , we = high) the dram has four banks, each with 8,192 rows. this command activates the bank selected by ba1 and ba0 (bs) and a row address selected by a0 through a12. this command corresponds to a conventional dram?s ras falling.
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 15/46 precharge command ( cs , ras , we = low, cas = high ) this command begins precharge operation of the bank selected by ba1 and ba0 (bs). when a10 is high, all banks are precharge d, regardless of ba1 and ba0. when a10 is low, only the bank selected by ba1 and ba0 is precharged. after this command, the dram can?t accept the activate command to the precharging bank during t rp (precharge to activate command period). this command corresponds to a conventional dram?s ras rising. write command ( cs , cas , we = low, ras = high) if the mode register is in the burst write mode, this command sets the burst start address given by the column address to begin the burst write operation. the first write data in burst can be input with this command with subsequent data on following clocks. read command ( cs , cas = low, ras , we = high) read data is available after cas latency requirements have been met. this command sets the burst start address given by the column address.
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 16/46 cbr (auto) refresh command ( cs , ras , cas = low, we , cke = high) this command is a request to begin the cbr refresh operation. the refresh address is generated internally. before executing cbr refresh, all banks must be precharged. after this cycle, all banks will be in the idle (precharged) state and ready for a row activate command. during t rfc period (from refresh command to refresh or activate command), the dram cannot accept any other command. self refresh entry command ( cs , ras , cas , cke = low , we = high) after the command execution, self refresh op eration continues while cke remains low. when cke goes to high, the dram exits the self refresh mode. during self refresh mode, refresh interval an d refresh operation are performed internally, so there is no need for external control. before executing self refresh, all banks must be precharged. burst stop command ( cs , we = low, ras , cas = high) this command terminates the current burst operation. burst stop is valid at every burst length.
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 17/46 no operation ( cs = low, ras , cas , we = high) this command is not an execution command. no operations begin or terminate by this command.
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 18/46 basic feature and function descriptions 1. clock suspend clk cmd cke internal clk dq(cl3) rd q0 q1 q3 d0 d1 d2 d3 wr masked by cke 1) cl o c k suspended du r in g w r ite (bl=4) 2) clock suspended during read (bl=4) not written suspended dout q2 2. dqm operation clk cmd dqm dq(cl3) rd q1 q2 q3 d0 d1 d3 wr masked by dqm masked by dqm clk cmd dqm dq(cl3) cke rd q5 q6 q7 q1 q3 hi-z hi-z hi-z hi-z 1)write mask (bl=4) 2 ) r ea d mask (b l = 4 ) dqm to data-in mask=0 dqm to data-out mask=2 3)dqm with clcok suspended (full page read) *note2 internal clk q8 *note: 1. cke to clk disable/enable = 1clk. 2. dqm masks data out hi-z after 2clk s which should masked by cke ?l?. 3. dqm masks both data-in and data-out.
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 19/46 3. cas interrupt (i) clk cmd add dq(cl3) rd clk cmd add dq wr da0 db0 db1 rd a b qb0 qb2 qa0 qb3 qb1 t ccd *note 2 wr t ccd *note 2 a b t cdl *note 3 wr rd t ccd *note 2 a b da0 db0 db1 t cdl *note 3 dq(cl3) 1)read interrupted by read (bl=4) 2)write interrupted by write (bl=2) 3)write interrupted by read (bl=2) *n o t e 1 *note: 1. by ?interrupt? is m eant to stop burst read/write by external before the end of burst. by ? cas interrupt ?, to stop burst read/write by cas access; read and write. 2. t ccd : cas to cas delay. (=1clk) 3. t cdl : last data in to new column address delay. (=1clk)
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 20/46 4. cas interrupt (ii): read interrupted by write & dqm *note: 1. to prevent bus cont ention, there should be at least one gap between data in and data out. 5. write interrupted by precharge & dqm clk cmd dqm dq d0 d1 d2 wr *note3 *note2 masked by dqm d3 pre *note: 1. to prevent bus contention, dqm should be issued which makes at least one gap between data in and data out. 2. to inhibit invalid wr ite, dqm should be issued. 3. this precharge command and burst wr ite command should be of the same bank, otherwise it is not precharge interrupt but only another bank pr echarge of four banks operation. clk i)cmd ii)cmd iii)cmd iv)cmd dqm dqm dqm dq m dq dq dq dq d1 d3 d1 d0 d2 d3 d0 d2 wr cl=3,bl=4 rd wr rd wr d1 d3 d0 d2 d1 d3 d0 d2 rd w r hi-z d1 d3 d0 d2 q0 *note1 v)cmd dqm dq rd wr hi- z rd
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 21/46 6. precharge clk cmd dq d0 d1 d2 d3 wr t rdl *note1 clk cmd rd pre dq(cl3) q0 q1 q2 q3 pre 1)n o r m a lw r ite (bl=4) 2)normal read (bl=4) cl=3 *note2 . 7. auto precharge clk cmd dq d0 d1 d2 d3 wr clk cmd rd dq(cl3) *note3 auto precharge starts d0 d1 d2 d3 *note3 a u t o precharge s t ar t s 1)n o r m a lw r ite (bl=4) 2 )n o r m a l r e a d(bl=4) t rdl (min) *note: 1. t rdl : last data in to row precharge delay. 2. number of valid output data after row precharge: 2 for cas latency = 3 respectively. 3. the row active command of the precharge bank can be issued after t rp from this point. the new read/write command of other activated bank can be issued from this point. at burst read/write with auto precharge, cas in terrupt of the same/another bank is illegal.
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 22/46 8. burst stop & interrupted by precharge clk cmd dq(cl3) clk cmd dqm dq d0 d1 d2 d3 wr stop *note1 q0 q1 rd stop 1)writ e burst st o p(bl=8) 2)read burst stop (bl=4) clk cmd clk cmd dqm dq d0 d1 mask mask wr q0 q1 rd pre 1)writ e int e rrupt e db y pr e ch a rg e (bl=4) 2)read interrupted by precharge (bl=4) *note2 pre *note4 *note3 dq(cl3) *note5 q2 t rdl t bdl d4 d5 q3 9. mrs *note: 1. t bdl : 1 clk; last data in to burst stop delay. read or write burst stop command is valid at every burst length. 2. number of valid output data after burst stop: 2 for cas latency = 3 respectiviely. 3. write burst is terminated. t rdl determinates the last data write. 4. dqm asserted to prevent corr uption of locations d2 and d3. 5. precharge can be issued here or earlier (satisfying t ras min delay) with dqm. 6. pre: all banks precharge, if necessary. mrs can be issued only at all banks precharge state. clk cmd pre *n ot e6 mrs act t rp 2clk 1)m o de regis t er se t
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 23/46 10. clock suspend exit & power down exit 11. auto refresh & self refresh *note: 1. active power down: one or more banks active state. 2. precharge power down: all banks precharge state. 3. the auto refresh is the same as cbr refresh of conventional dram. no precharge commands are required after auto refresh command. during t rfc from auto refresh command, any ot her command can not be accepted. 4. before executing auto/self refresh command, all banks must be idle state. 5. mrs, bank active, auto/self re fresh, power down mode entry. 6. during self refresh entry, refresh interval and refresh operation are performed internally. after self refresh entry, self refresh mode is kept while cke is low. during self refresh entry, all inputs expect cke will be don?t cared, and outputs will be in hi-z state. for the time interval of t rfc from self refresh exit command, any other command can not be accepted. 8k cycles of burst auto refresh is requi red immediately before self refresh entry and immediately after self refresh exit. clk cke internal clk cmd rd t ss *note1 clk cke internal clk cmd act t ss *note2 nop 1)clock suspend(= a ctive powe r down)exit 2)powe r down (=p r echa r ge powe r down) clk cmd pre ar cke cmd t rp t rf c *note5 *note4 clk cmd pre sr cke cmd t rp t rfc *note4 1)auto refresh & self refresh 2)self refresh *n o t e 3 *note6
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 24/46 12. about burst type control sequential counting at mrs a3 = ?0?. see the burst sequence table. (bl = 4,8) bl = 1, 2, 4, 8 and full page. basic mode interleave counting at mrs a3 = ?1?. see the burst sequence table. (bl = 4,8) bl = 4, 8 at bl =1, 2 interleave counting = sequential counting random mode random column access t ccd = 1 clk every cycle read/write command with random column address can realize random column access. that is similar to extended data out (edo) operation of conventional dram. 13. about burst length control 1 at mrs a210 = ?000? at auto precharge. t ras should not be violated. 2 at mrs a210 = ?001? at auto precharge. t ras should not be violated. 4 at mrs a210 = ?010? 8 at mrs a210 = ?011? basic mode full page at mrs a210 = ?111? at the end of the burst lengt h, burst is warp-around. random mode burst stop t bdl = 1, valid dq after burst stop is 2 for cas latency 3 respectively. using burst stop command, any burst length control is possible. ras interrupt (interrupted by precharge) before the end of burst. row precharge comm and of the same bank stops read /write burst with auto precharge. t rdl = 2clk with dqm , valid dq after burst stop is 2 for cas latency 3 respectively. during read/write burst with auto precharge, ras interrupt can not be issued. interrupt mode cas interrupt before the end of burst, new read/write stops read/write burst and starts new read/write burst. during read/write burst with auto precharge, cas interrupt can not be issued.
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 25/46 function truth table (table 1) current state cs ras cas we ba addr action note h x x x x x nop l h h h x x nop l h h l x x illegal 2 idle l h l x ba ca, a10/ap illegal 2 l l h h ba ra row (&bank) active ; latch ra l l h l ba a10/ap nop 4 l l l h x x auto refresh or self refresh 5 l l l l op code op code mode register access 5 h x x x x x nop l h h h x x nop l h h l x x illegal 2 row l h l h ba ca, a10/ap begin read ; latch ca ; determine ap active l h l l ba ca, a10/ap begin write ; latch ca ; determine ap l l h h ba ra illegal 2 l l h l ba a10/ap precharge l l l x x x illegal h x x x x x nop (continue burst to end ? row active) l h h h x x nop (continue burst to end ? row active) l h h l x x term burst ? row active read l h l h ba ca, a10/ap term burst, new read, determine ap l h l l ba ca, a10/ap term burst, new write, determine ap 3 l l h h ba ra illegal 2 l l h l ba a10/ap term burst, precharge timing for reads l l l x x x illegal h x x x x x nop (continue burst to end ? row active) l h h h x x nop (continue burst to end ? row active) l h h l x x term burst ? row active write l h l h ba ca, a10/ap term burst, new read, determine ap 3 l h l l ba ca, a10/ap term burst, new write, determine ap 3 l l h h ba ra illegal 2 l l h l ba a10/ap term burst, precharge timing for writes 3 l l l x x x illegal h x x x x x nop (continue burst to end ? row active) read with l h h h x x nop (continue burst to end ? row active) auto l h h l x x illegal precharge l h l x ba ca, a10/ap illegal l l h x ba ra, ra10 illegal 2 l l l x x x illegal h x x x x x nop (continue burst to end ? row active) write with l h h h x x nop (continue burst to end ? row active) auto l h h l x x illegal precharge l h l x ba ca, a10/ap illegal l l h x ba ra, ra10 illegal 2 l l l x x x illegal
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 26/46 current state cs ras cas we ba addr action note h x x x x x nop ? idle after t rp l h h h x x nop ? idle after t rp precharging l h h l x x illegal 2 l h l x ba ca illegal 2 l l h h ba ra illegal 2 l l h l ba a10/ap nop ? idle after t rp 4 l l l x x x illegal h x x x x x nop ? row active after t rcd l h h h x x nop ? row active after t rcd row l h h l x x illegal 2 activating l h l x ba ca illegal 2 l l h h ba ra illegal 2 l l h l ba a10/ap illegal 2 l l l x x x illegal h x x x x x nop ? idle after t rfc l h h x x x nop ? idle after t rfc refreshing l h l x x x illegal l l h x x x illegal l l l x x x illegal h x x x x x nop ? idle after 2clocks mode l h h h x x nop ? idle after 2clocks register l h h l x x illegal accessing l h l x x x illegal l l x x x x illegal abbreviations: ra = row address ba = bank address nop = no operation command ca = column address ap = auto precharge *note: 1. all entries assume the cke was active (high) during the precharge clock and the current clock cycle. 2. illegal to bank in specified state; function may be legal in the bank indicat ed by ba, depending on the state of the bank. 3. must satisfy bus contention, bus turn around, and/or write recovery requirements. 4. nop to bank precharge or in idle state. ma y precharge bank indicated by ba (and a10/ap). 5. illegal if any bank is not idle.
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 27/46 function truth table (table2) current state cke ( n-1 ) cke n cs ras cas we addr action note h x x x x x x invalid l h h x x x x exit self refresh ? idle after t rfc (abi) 6 self l h l h h h x exit self refresh ? idle after t rfc (abi) 6 refresh l h l h h l x illegal l h l h l x x illegal l h l l x x x illegal l l x x x x x nop (maintain self refresh) h x x x x x x invalid all l h h x x x x exit self refresh ? abi 7 banks l h l h h h x exit self refresh ? abi 7 precharge l h l h h l x illegal power l h l h l x x illegal down l h l l x x x illegal l l x x x x x nop (maintain low power mode) h h x x x x x refer to table1 h l h x x x x enter power down 8 h l l h h h x enter power down 8 h l l h h l x illegal all h l l h l x x illegal banks h l l l h h ra row (& bank) active idle h l l l l h x enter self refresh 8 h l l l l l op code mode register access l l x x x x x nop any state h h x x x x x refer to operations in table 1 other than h l x x x x x begin clock suspend next cycle 9 listed l h x x x x x exit clock suspend next cycle 9 above l l x x x x x maintain clock suspend abbreviations: abi = all banks idle, ra = row address *note: 6.cke low to high transition is asynchronous. 7.cke low to high transition is asynchronous if restart internal clock. a minimum setup time 1clk + t ss must be satisfy before any command other than exit. 8.power down and self refresh can be enter ed only from the all banks idle state. 9.must be a legal command.
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 28/46 single bit read-write-read cycle (same page) @ cas latency = 3, burst length = 1
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 29/46 note: 1. all input expect cke & dqm can be don?t care when cs is high at the clk high going edge. 2. bank active @ read/write are controlled by ba0~ba1. ba1 ba0 active & read/write 0 0 bank a 0 1 bank b 1 0 bank c 1 1 bank d 3. enable and disable auto precharge function ar e controlled by a10/ap in read/write command a10/ap ba1 ba0 operating 0 0 disable auto precharge, leave a bank active at end of burst. 0 1 disable auto precharge, leave b bank active at end of burst. 1 0 disable auto precharge, leave c bank active at end of burst. 0 1 1 disable auto precharge, leave d bank active at end of burst. 0 0 enable auto precharge, precharge bank a at end of burst. 0 1 enable auto precharge, precharge bank b at end of burst. 1 0 enable auto precharge, pr echarge bank c at end of burst. 1 1 1 enable auto precharge, pr echarge bank d at end of burst. 4. a10/ap and ba0~ba1 control bank pr echarge when precharge is asserted. a10/ap ba1 ba0 precharge 0 0 0 bank a 0 0 1 bank b 0 1 0 bank c 0 1 1 bank d 1 x x all banks
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 30/46 power up sequence 0123456789 clock cke cs ras cas addr we dq dqm a10/ap t rp key key ba1 ba0 high-z precharge (all banks) auto refresh auto refresh mode register set extended mode register set :don'tcare t rfc t rfc high level is necessary high level is necessary 10 11 12 13 14 15 16 17 18 19 20 ra bs bs ra row active t mrd t mrd power-up and initialization sequence the following sequence is required for power up and initialization. 1. apply power and attempt to maintain cke at a low state (all other inputs may be undefined.) - apply vdd before or at the same time as vddq - apply vddq 2. start clock and maintain stable condition for a minimum. 3. the minimum of 200us after stable power and clock (clk), apply nop & take cke high. 4. issue precharge commands for all banks of the device. 5. issue 2 or more auto-refresh commands. 6. issue mode register set command to initialize the mode register. 7. issue extended mode register set command to set pasr and ds.
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 31/46 read & write cycle at same bank @ burst length = 4 clock cke cs ras cas addr we dq dqm a10/ap ba1 ba0 cl =3 row active (a-bank) read (a-bank) write (a-bank) row active (a-bank) precharge (a - bank) :don't care ra *note2 rb cb0 ra ca0 high t rcd 0123456789 10 11 12 13 14 15 16 17 18 19 rb qa1 qa2 qa3 qb1 qb2 qb3 qb0 qa0 t rdl *note3 precharge (a-bank) *note: 1. minimum row cycle times is requi red to complete internal dram operation. 2. row precharge can interrupt burst on any cycle. [cas latenc y-1] number of valid output data is available after row precharge. last valid output will be hi-z (t shz ) after the clock. 3. output will be hi-z after the end of burst. (1, 2, 4, 8 & full page bit burst)
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 32/46 page read & write cycle at same bank @ burst length = 4 clock cke cs ras cas addr we dq dqm a10/ap ba1 ba0 cl =3 *note3 row active (a-bank) read (a-bank) read (a-bank) write (a-bank) write (a-bank) precharge (a - bank) :don't care qa0 qa1 qb0 qb1 dd0 dd1 t cdl dc1 dc0 ra *note2 cc cd ra ca cb *note1 high t rcd t rdl 0123456789 10 11 12 13 14 15 16 17 18 19 note: 1. to write data before burst read ends. dqm should be asserted three cycles prior to write command to avoid bus contention. 2. row precharge will interrupt writing. last data input, t rdl before row precharge, will be written. 3. dqm should mask invalid input data on precharge command cycle when asserting precharge before end of burst. input data after row precharge cycle will be masked internally.
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 33/46 page read cycle at different bank @ burst length = 4 row active ( a-bank) row active (b-bank) read (a-bank) row active (c-bank) read (b-bank) precharge (a-bank) row active (d-bank) read (c-bank) precharge (b-bank) read (d-bank) precharge (c-bank) precharge (d-bank) :don't care clock cke cs ras cas addr we dqm a10/ap ba1 ba0 cl=3 rbb caa rcc cbb rdd ccc cdd *note1 *note2 raa rdd qaa0 qaa1 qaa2 qbb0 qcc1 qcc2 qdd0 qdd2 qdd1 qbb1 qcc0 qbb2 raa rbb rcc high dq 0123456789 10 11 12 13 14 15 16 17 18 19 note: 1. cs can be don?t cared when ras , cas and we are high at the clock high going edge. 2. to interrupt a burst read by row precharge, both the read and the precharge banks must be the same.
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 34/46 page write cycle at different bank @ burst length = 4 *note: 1. to interrupt burst writ e by row precharge, dqm should be asserted to mask invalid input data. 2. to interrupt burst write by row precharge, both the write and the precharge banks must be the same.
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 35/46 read & write cycle at different bank @ burst length = 4 clock cke cs ras cas addr we dq dqm a10/ap ba1 ba0 cl =3 row active (a-bank) read (b-bank) :don't care raa cbc raa caa qaa1 qaa2 qaa3 ddb1 ddb2 ddd3 ddb0 qaa0 write (d-bank) high rdb cdb rbc rbb rac qbc0 qbc1 read (a-bank) row active (d-bank) precharge (a-bank) row active (b-bank) t cdl *note1 0123456789 10 11 12 13 14 15 16 17 18 19 *note: 1. t cdl should be met to complete write.
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 36/46 read & write cycle with auto precharge @ burst length = 4 clock cke cs ras cas addr we dq dqm a10/ap ba1 ba0 cl =3 row active (a-bank) row active (d-bank) auto precharge start point read with auto precharge (a-bank) auto precharge start point (d-bank) :don't care ra cb ra ca rb rb qaa1 qaa2 qaa3 ddb1 ddb2 ddd3 ddb0 qaa0 write with auto precharge (d-bank) high 0123456789 10 11 12 13 14 15 16 17 18 19 *note: 1. t cdl should be controlled to meet minimum t ras before internal precharge start. (in the case of burst length = 1 & 2)
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 37/46 clock suspension & dqm operation cycle @ cas latency = 3, burst length = 4 clock cke cs ras cas addr we dq dqm a10/ap ba1 ba0 ra ca cb cc ra qa2 qa0 qa1 qa3 t shz qb0 t shz dc0 dc2 *note1 row active read clock supension read read dqm write write dqm clock suspension write dqm :don't care 0123456789 10 11 12 13 14 15 16 17 18 19 20 *note: 1. dqm is needed to prevent bus contention
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 38/46 read interrupted by precharge command & read burst stop cycle @ burst length = full page clock cke cs ras cas addr we dq dqm a10/ap ba1 ba0 raa caa cab raa row active (a-bank) read (a-bank) burst stop read (a-bank) :don't care high cl=3 qaa0 qaa1 qab1 qab0 qab2 qaa2 qaa3 qaa4 qab3 qab4 qab5 1 1 precharge (a-bank) 0123456789 10 11 12 13 14 15 16 17 18 19 *note: 1. about the valid dqs after bur st stop, it is same as the case of ras interrupt. this case is illustrated above timing diagram. see the label 1 but at burst write, burst stop and ras interrupt should be compared carefully. refer the timing diagram of ?full page write burst stop cycles?. 2. burst stop is valid at every burst length.
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 39/46 write interrupted by precharge command & write burst stop cycle @ burst length = full page *note: 1. data-in at the cycle of inte rrupted by precharge can not be written into the corresponding memory cell. it is define d by ac parameter of t rdl . dqm at write interrupted by precharge comm and is needed to prevent invalid write. dqm should mask invalid input data on precharge command cycle when asserting precharge before end of burst. input data after row precharge cycle will be masked internally. 2. burst stop is valid at every burst length.
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 40/46 active/precharge power down mode @ cas latency = 3, burst length = 4 clock cke cs ras cas addr we dq dqm a10/ap ba0 active power-down exit precharge : don't care *note2 *note1 t ss t ss ra qa0 qa1 qa2 t shz precharge power-down entry precharge power-down exit row active active power-down entry read ba1 0123456789 10 11 12 13 14 15 16 17 18 19 ra ca *note: 1. all banks should be in idle state pr ior to entering precharge power down mode. 2. cke should be set high at least 1clk + t ss prior to row active command. 3. can not violate minimum re fresh specification. (64ms)
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 41/46 deep power down mode entry & exit cycle note: definition of deep power mode for mobile sdram: deep power down mode is an operating mode to achieve maximu m power reduction by cutting the power of the whole memory of the device. once the device enters in deep power down mode, data will not be retained. full initialization is required when the device exits from deep power down mode. to enter deep power down mode 1) the deep power down mode is entered by having cs and we held low with ras and cas high at the rising edge of the clock. while cke is low. 2) clock must be stable before exited deep power down mode. 3) device must be in the all banks idle state prior to entering deep power down mode. to exit deep power down mode 4) the deep power down mode is exited by asserting cke high. 5) 200 s wait time is required to exit from deep power down. 6) upon exiting deep power down an all bank precharge command must be issued followed by two auto refresh commands and a load mode register sequence.
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 42/46 self refresh entry & exit cycle * note: to enter self refresh mode 1. cs , ras & cas with cke should be low at the same clock cycle. 2. after 1 clock cycle, all the inputs including t he system clock can be don?t care except for cke. 3. the device remains in self refresh mode as long as cke stays ?low?. cf.) once the device enters self refresh mode, minimum t ras is required before exit from self refresh. to exit self refresh mode 4. system clock restart and be stable before returning cke high. 5. cs starts from high. 6. minimum t rfc is required after cke going high to complete self refresh exit. 7. 8k cycles of burst auto refresh is required immediately before self refresh ent ry and immediately after self refresh exit.
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 43/46 mode register set cycle extended mode register set cycle clock cke cs ras cas addr we dq dqm :don't care 0123456 high key ra hi-z *note2 *note1 *note3 mrs new command ba1 bs ba0 bs a10 clock cke cs ras cas addr we dq dqm 0123456 high key ra hi-z *note2 *note1 *note3 emrs new command ba1 bs ba0 bs a10 all banks precharge should be completed before mode register set cycle and auto refresh cycle. mode register set cycle *note: 1. cs , ras , cas , & we activation at the same clock cycle with address key will set internal mode register. 2. minimum 2 clock cycles should be met before new ras activation. 3. please refer to mode register set table.
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 44/46 packing dimensions 54-ball sdram ( 8x8 mm ) symbol dimension in mm dimension in inch min norm max min norm max a 1.00 0.039 a 1 0.20 0.25 0.30 0.008 0.010 0.012 a 2 0.61 0.66 0.71 0.024 0.026 0.028 b 0.30 0.35 0.40 0.012 0.014 0.016 d 7.90 8.00 8.10 0.311 0.315 0.319 e 7.90 8.00 8.10 0.311 0.315 0.319 d 1 -------- 6.40 -------- -------- 0.252 -------- e 1 -------- 6.40 -------- -------- 0.252 -------- e -------- 0.80 -------- -------- 0.031 -------- controlling dimension : millimeter.
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 45/46 revision history revision date description 1.0 2013.07.10 original 1.1 2014.02.21 modify t he specification of i cc2ns , i cc3p , i cc3ps , i cc3ns
esmt m52d2561616a (2f) operation temperature condition -40c~85c elite semiconductor memory technology inc. publication date : feb. 2014 revision : 1.1 46/46 important notice all rights reserved. no part of this document may be reproduc ed or duplicated in any form or by any means without the prior permission of esmt. the contents contained in this document are believed to be accurate at the time of publication. esmt assumes no responsibility for any error in this document, and reserves the right to chang e the products or specification in this document without notice. the information contained herein is pres ented only as a guide or examples for the application of our products. no responsibility is assumed by esmt for any infringement of patents, copyrights , or other intellectual property rights of third parties which may result from it s use. no license, either express , implied or otherwise, is granted un der any patents, copy rights or other intellectual property righ ts of esmt or others. any semiconductor devices may have inhe rently a certain rate of failure. to minimize risks associated with cu stomer's application, adequate design and operating safeguards against injury, damage, or loss from such failure, should be provided by the custom er when making application designs. esmt's products are not authorized for use in critical applications such as, but not limited to, life support devices or system, where failure or abnormal operation may directly affect human li ves or cause physical injury or property damage. if products descr ibed here are to be used for such kinds of application, purchaser must do its ow n quality assurance testing appropriate to such applications.

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